DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
BGA6589
MMIC wideband medium power
amplifier
Product specification
2003 Sep 19
Philips Semiconductors
Product specification
MMIC wideband medium power amplifier
BGA6589
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134)
SYMBOL
VS
PARAMETER
DC device voltage
CONDITIONS
RF input AC coupled
MIN.
MAX.
UNIT
−
−
−
6
V
IS
DC supply current
150
800
+150
150
15
mA
mW
°C
°C
dBm
Ptot
Tstg
Tj
total power dissipation
storage temperature
Ts ≤ 70 °C; note 1
−65
−
operating junction temperature
maximum drive power
PD
−
Note
1. Ts is the temperature at the soldering point of pin 2.
THERMAL CHARACTERISTICS
SYMBOL
Rth j-s
Note
PARAMETER
CONDITIONS
VALUE
UNIT
thermal resistance from junction to solder point Ts ≤ 70 °C note 1
100
K/W
1. Ts is the temperature at the soldering point of pin 2.
STATIC CHARACTERISTICS
Tj = 25 °C; VS = 9 V; Rbias = 51 Ω; unless otherwise specified.
SYMBOL
IS
PARAMETER
supply current
CONDITIONS
MIN.
TYP.
81
MAX.
UNIT
73
89
mA
2003 Sep 19
3
Philips Semiconductors
Product specification
MMIC wideband medium power amplifier
BGA6589
CHARACTERISTICS
VS = 9 V; IS = 84 mA; Tamb = 25 °C; IP3(out) tone spacing = 1 MHz; PL = 0 dBm per tone (see Fig.2); Rbias = 51 Ω;
ZL = ZS = 50 Ω; unless otherwise specified.
SYMBOL
|s21|2
PARAMETER
CONDITIONS
TYP.
22
UNIT
dB
insertion power gain
f = 850 MHz
f = 1.95 GHz
f = 2.5 GHz
f = 850 MHz
f = 1.95 GHz
f = 2.5 GHz
f = 850 MHz
f = 1.95 GHz
f = 2.5 GHz
f = 850 MHz
f = 1.95 GHz
f = 2.5 GHz
f = 850 MHz
f = 2.5 GHz
17
15
9
dB
dB
RL IN
RL OUT
NF
return losses input
return losses output
noise figure
dB
11
15
10
13
13
3.0
3.3
3.4
1.1
1.1
21
20
11
15
33
30
dB
dB
dB
dB
dB
dB
dB
dB
K
stability factor
−
−
PL 1 dB
IP3(in)
IP3(out)
load power
at 1 dB gain compression; f = 850 MHz
at 1 dB gain compression; f = 1.95 GHz
f = 850 MHz
dBm
dBm
dBm
dBm
dBm
dBm
input intercept point
output intercept point
f = 2.5 GHz
f = 850 MHz
f = 2.5 GHz
2003 Sep 19
4
Philips Semiconductors
Product specification
MMIC wideband medium power amplifier
BGA6589
APPLICATION INFORMATION
Figure 2 shows a typical application circuit for the BGA6589 MMIC. The device is internally matched to 50 Ω, and
therefore does not require any external matching. The value of the input and output DC blocking capacitors C1 and C2
depends on the operating frequency; see the tables below. Capacitors C1 and C2 are used in conjunction with L1 and
C3 to fine tune the input and output impedance. For optimum supply decoupling, a 1 µF capacitor (C5) can be added.
The external components should be placed as close as possible to the MMIC. When using via holes, use multiple via
holes per pin in order to limit ground path induction. Resistor R1 is a bias resistor providing DC current stability with
temperature.
(2)
R1
V
S
(1)
C3
C4
C5
L1
50 Ω
microstrip
50 Ω
microstrip
C1
C2
V
D
3
1
2
MGX419
(1) Optional capacitor for optimum supply decoupling.
(2) R1 values at operating supply voltage:
VS = 6 V; R1 = 15 Ω.
VS = 9 V; R1 = 51 Ω.
VS = 11.5 V; R1 = 82 Ω.
Fig.2 Typical application circuit.
Table 1 Component descriptions (see Fig.2)
VALUE AT OPERATING FREQUENCY
COMPONENT
DESCRIPTION
DIMENSIONS
500
MHz
800
MHz
1950
MHz
2400
MHz
3500
MHz
C1, C2
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
electrolytic or tantalum capacitor
SMD inductor
0603
0603
0603
0603
0603
−
220 pF 100 pF 68 pF
56 pF
1 nF
39 pF
1 nF
C3
1 nF
100 pF 68 pF
1 µF 1 µF
1 nF
1 nF
22 pF
1 µF
C4
22 pF
1 µF
15 pF
1 µF
C5 (optional)
L1
68 nH 33 nH 22 nH 18 nH 15 nH
R1
SMD resistor 0.5 W; VS = 9 V
−
−
−
−
−
2003 Sep 19
5
Philips Semiconductors
Product specification
MMIC wideband medium power amplifier
BGA6589
90°
1.0
0.8
0.6
0.4
0.2
0
+1
135°
45°
+0.5
+2
+0.2
+5
0
0.2
0.5
1
2
5
10
0°
180°
200 MHz
2.6 GHz
−5
−0.2
−2
−0.5
−135°
−45°
−1
1.0
−90°
MGX409
IS = 84 mA; VS = 9 V; PD = −30 dBm; ZO = 50 Ω.
Fig.3 Input reflection coefficient (s11); typical values.
90°
1.0
0.8
0.6
0.4
0.2
0
+1
135°
45°
+0.5
+2
+0.2
+5
2.6 GHz
0.5
0
0.2
1
2
5
10
0°
180°
200 MHz
−5
−0.2
−2
−0.5
−135°
−45°
−1
1.0
−90°
MGX410
IS = 84 mA; VS = 9 V; PD = −30 dBm; ZO = 50 Ω.
Fig.4 Output reflection coefficient (s22); typical values.
6
2003 Sep 19
Philips Semiconductors
Product specification
MMIC wideband medium power amplifier
BGA6589
MGX411
MGX412
0
25
handbook, halfpage
2
handbook, halfpage
2
|s
|
21
(dB)
|s
|
12
(dB)
20
15
10
5
−10
−20
−30
−40
0
0
500
1000
1500
2000
2500
0
500
1000
1500
2000
2500
f (MHz)
f (MHz)
IS = 84 mA; VS = 9 V; PD = −30 dBm; ZO = 50 Ω.
IS = 84 mA; VS = 9 V; PD = −30 dBm; ZO = 50 Ω.
Fig.5 Isolation (|s12|2) as a function of frequency;
typical values.
Fig.6 Insertion gain (|s21|2) as a function of
frequency; typical values.
MGX413
MGX414
25
40
handbook, halfpage
handbook, halfpage
P
L1dB
IP3
(out)
(dBm)
20
(dBm)
30
15
10
5
20
10
0
0
0
500
1000
1500
2000
2500
0
500
1000
1500
2000
2500
f (MHz)
f (MHz)
IS = 84 mA; VS = 9 V; ZO = 50 Ω.
IS = 84 mA; VS = 9 V; PL = 0 dBm; ZO = 50 Ω.
Fig.7 Load power as a function of frequency;
typical values.
Fig.8 Output intercept as a function of frequency;
typical values.
2003 Sep 19
7
Philips Semiconductors
Product specification
MMIC wideband medium power amplifier
BGA6589
MGX415
MGX416
5
5
handbook, halfpage
handbook, halfpage
K
NF
(dB)
4
3
2
1
4
3
2
1
0
0
0
0
500
1000
1500
2000
2500
500
1000
1500
2000
2500
f (MHz)
f (MHz)
IS = 84 mA; VS = 9 V; ZO = 50 Ω.
IS = 84 mA; VS = 9 V; ZO = 50 Ω.
Fig.9 Noise figure as a function of frequency;
typical values.
Fig.10 Stability factor as a function of frequency;
typical values.
MGX417
100
handbook, halfpage
I
s
(mA)
90
80
70
60
−40
−20
0
20
40
60
T (°C)
80
j
VS = 8 V; Rbias = 51 Ω.
Fig.11 Supply current as a function of operating
junction temperature; typical values.
2003 Sep 19
8
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Scattering parameters
IS = 83 mA; VS = 8 V; PD = −30 dBm; ZO = 50 Ω; Tamb = 25 °C
s11
MAGNITUDE
(ratio)
s21
MAGNITUDE
(ratio)
16.61
s12
MAGNITUDE
(ratio)
s22
MAGNITUDE
(ratio)
f (MHz)
K-FACTOR
ANGLE
(deg)
ANGLE
(deg)
ANGLE
(deg)
ANGLE
(deg)
200
0.30
0.31
0.32
0.33
0.33
0.34
0.34
0.35
0.35
0.35
0.35
0.34
0.34
0.33
0.33
0.32
0.31
0.30
0.29
0.28
0.26
0.25
0.24
0.22
0.21
0.21
0.07
0.19
0.18
0.18
−6.87
161.86
0.04
0.04
0.04
0.04
0.04
0.04
0.04
0.04
0.04
0.04
0.05
0.05
0.05
0.05
0.05
0.06
0.06
0.06
0.07
0.07
0.07
0.08
0.08
0.08
0.09
0.09
0.12
0.10
0.10
0.11
2.38
0.34
0.34
0.34
0.34
0.34
0.33
0.33
0.32
0.32
0.31
0.30
0.30
0.29
0.28
0.27
0.26
0.25
0.24
0.23
0.23
0.22
0.22
0.22
0.23
0.24
0.28
0.28
0.27
0.30
0.32
−20.03
1.0
1.0
1.1
1.1
1.1
1.1
1.1
1.1
1.1
1.1
1.1
1.1
1.1
1.1
1.1
1.1
1.1
1.1
1.1
1.1
1.2
1.2
1.1
1.2
1.0
1.2
1.2
1.2
1.2
1.0
300
−10.91
−15.72
−21.0
−26.44
−32.08
−37.75
−43.18
−48.9
16.18
15.59
14.91
14.19
13.51
12.77
11.88
11.22
10.64
10.0
9.39
8.93
8.54
8.07
7.60
7.32
7.08
6.74
6.46
6.28
6.07
5.78
5.61
5.51
5.33
6.44
4.88
4.78
4.57
153.02
144.39
136.01
128.12
120.88
114.19
107.40
101.34
95.86
90.82
85.46
80.15
75.95
72.26
67.95
63.43
59.81
56.09
51.84
48.02
45.0
3.66
−30.50
−40.74
−50.56
−60.07
−69.21
−77.91
−86.13
−94.01
−101.7
-109.1
−116.4
−123.6
−130.9
−138.2
−145.7
−153.6
−162.0
−170.7
179.99
170.17
160.16
149.59
139.39
129.67
120.55
80.88
400
5.17
500
6.75
600
8.67
700
10.94
13.65
15.15
17.89
19.93
22.11
24.10
24.62
25.98
27.67
28.69
28.33
28.44
29.27
29.17
28.46
28.37
28.17
26.46
24.85
24.72
24.46
20.48
19.71
18.98
800
900
1000
1100
1200
1300
1400
1500
1600
1700
1800
1900
2000
2100
2200
2300
2400
2500
2600
2700
2800
2900
3000
3100
−54.2
−59.55
−64.78
−69.93
−74.81
−79.82
−84.88
−89.81
−94.89
−100.3
−105.9
−111.8
−118.0
−125.2
−132.8
−141.3
−153.3
−127.7
−167.20
178.11
165.13
41.33
36.72
33.15
30.04
28.98
19.14
16.89
16.56
105.15
96.35
89.48
Philips Semiconductors
Product specification
MMIC wideband medium power amplifier
BGA6589
PACKAGE OUTLINE
Plastic surface mounted package; collector pad for good heat transfer; 3 leads
SOT89
B
A
D
b
3
E
L
H
E
1
2
3
c
b
2
w
M
b
1
e
1
e
0
2
4 mm
scale
DIMENSIONS (mm are the original dimensions)
L
min.
UNIT
A
b
b
b
c
D
E
e
e
H
E
w
1
2
3
1
1.6
1.4
0.48
0.35
0.53
0.40
1.8
1.4
0.44
0.37
4.6
4.4
2.6
2.4
4.25
3.75
mm
3.0
1.5
0.8
0.13
REFERENCES
EUROPEAN
PROJECTION
OUTLINE
VERSION
ISSUE DATE
IEC
JEDEC
EIAJ
97-02-28
99-09-13
SOT89
TO-243
SC-62
2003 Sep 19
10
Philips Semiconductors
Product specification
MMIC wideband medium power amplifier
BGA6589
DATA SHEET STATUS
DATA SHEET
STATUS(1)
PRODUCT
STATUS(2)(3)
LEVEL
DEFINITION
I
Objective data
Development This data sheet contains data from the objective specification for product
development. Philips Semiconductors reserves the right to change the
specification in any manner without notice.
II
Preliminary data Qualification
This data sheet contains data from the preliminary specification.
Supplementary data will be published at a later date. Philips
Semiconductors reserves the right to change the specification without
notice, in order to improve the design and supply the best possible
product.
III
Product data
Production
This data sheet contains data from the product specification. Philips
Semiconductors reserves the right to make changes at any time in order
to improve the design, manufacturing and supply. Relevant changes will
be communicated via a Customer Product/Process Change Notification
(CPCN).
Notes
1. Please consult the most recently issued data sheet before initiating or completing a design.
2. The product status of the device(s) described in this data sheet may have changed since this data sheet was
3. For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status.
DEFINITIONS
DISCLAIMERS
Short-form specification
The data in a short-form
Life support applications
These products are not
specification is extracted from a full data sheet with the
same type number and title. For detailed information see
the relevant data sheet or data handbook.
designed for use in life support appliances, devices, or
systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips
Semiconductors customers using or selling these products
for use in such applications do so at their own risk and
agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.
Limiting values definition Limiting values given are in
accordance with the Absolute Maximum Rating System
(IEC 60134). Stress above one or more of the limiting
values may cause permanent damage to the device.
These are stress ratings only and operation of the device
at these or at any other conditions above those given in the
Characteristics sections of the specification is not implied.
Exposure to limiting values for extended periods may
affect device reliability.
Right to make changes
Philips Semiconductors
reserves the right to make changes in the products -
including circuits, standard cells, and/or software -
described or contained herein in order to improve design
and/or performance. When the product is in full production
(status ‘Production’), relevant changes will be
Application information
Applications that are
communicated via a Customer Product/Process Change
Notification (CPCN). Philips Semiconductors assumes no
responsibility or liability for the use of any of these
products, conveys no licence or title under any patent,
copyright, or mask work right to these products, and
makes no representations or warranties that these
products are free from patent, copyright, or mask work
right infringement, unless otherwise specified.
described herein for any of these products are for
illustrative purposes only. Philips Semiconductors make
no representation or warranty that such applications will be
suitable for the specified use without further testing or
modification.
2003 Sep 19
11
Philips Semiconductors – a worldwide company
Contact information
Fax: +31 40 27 24825
© Koninklijke Philips Electronics N.V. 2003
SCA75
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The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
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under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
R77/01/pp12
Date of release: 2003 Sep 19
Document order number: 9397 750 11765
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